onsemi FQI3N30TU

mpnFQI3N30TU
brandname: onsemi
manufacturername: onsemi

Attributes

Key	Value
Base Product Number	FQI3
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.2A (Tc)
Drain to Source Voltage.	300 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	7 nC @ 10 V
Input Capacitance (Ciss.	230 pF @ 25 V
Mfr	onsemi
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Power Dissipation (Max)	3.13W (Ta), 55W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2.2Ohm @ 1.6A, 10V
Series	QFET?
Supplier Device Package	I2PAK (TO-262)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5V @ 250?A