Attributes

Key Value
Base Product NumberNTB5405
CategoryDiscrete Semiconductor .
Current - Continuous Dr.116A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .88 nC @ 10 V
Input Capacitance (Ciss.4000 pF @ 32 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3W (Ta), 150W (Tc)
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs5.8mOhm @ 40A, 10V
Series-
Supplier Device PackageD?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 250?A
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