onsemi NTC080N120SC1

mpnNTC080N120SC1
brandname: onsemi
manufacturername: onsemi

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	31A (Tc)
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	56 nC @ 20 V
Input Capacitance (Ciss.	1112 pF @ 800 V
Mfr	onsemi
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tray
Package / Case	Die
Part Status	Active
Power Dissipation (Max)	178W (Tc)
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Series	-
Supplier Device Package	Die
Technology	SiC (Silicon Carbide Ju.
Vgs (Max)	+25V, -15V
Vgs(th) (Max) @ Id	4.3V @ 5mA