Attributes

Key Value
Base Product NumberNTMTS0
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60.5A (Ta), 464A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .152 nC @ 10 V
Input Capacitance (Ciss.11535 pF @ 30 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)5W (Ta), 294.6W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs0.72mOhm @ 50A, 10V
Series-
Supplier Device Package8-DFNW (8.3x8.4)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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