Attributes

Key Value
Base Product NumberNTP60N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .81 nC @ 10 V
Input Capacitance (Ciss.3220 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)2.4W (Ta), 150W (Tj)
Product StatusObsolete
Rds On (Max) @ Id, Vgs14mOhm @ 30A, 10V
Series-
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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