Attributes

Key Value
Base Product NumberNVATS4
CategoryDiscrete Semiconductor .
Current - Continuous Dr.27A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .18.5 nC @ 10 V
Input Capacitance (Ciss.875 pF @ 10 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)36W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs30mOhm @ 13A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageATPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.6V @ 1mA
prev