Attributes

Key Value
Base Product NumberNVB586
CategoryDiscrete Semiconductor .
Current - Continuous Dr.220A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .180 nC @ 10 V
Input Capacitance (Ciss.10760 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)283W (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 75A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageD?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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