| Base Product Number | NVH4L080 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 29A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 800 V |
| Mfr | onsemi |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Part Status | Active |
| Power Dissipation (Max) | 170mW (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| Series | Automotive, AEC-Q101 |
| Supplier Device Package | TO-247-4L |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -15V |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |