Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.18.4A (Ta), 108A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .55 nC @ 10 V
Input Capacitance (Ciss.4100 pF @ 50 V
Mfronsemi
Mounting TypeSurface Mount, Wettable.
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)3.8W (Ta), 131W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs5.1mOhm @ 34A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device Package5-DFNW (4.9x5.9) (8-SOF.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 192?A
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