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onsemi NVMFWS025P04M8LT1G
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manufacturer:

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C9.4A (Ta), 34.6A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1058 pF @ 20 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Part StatusActive
Power Dissipation (Max)3.5W (Ta), 44.1W (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 15A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device Package5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 255?A