Attributes

Key Value
Base Product NumberNVMYS6
CategoryDiscrete Semiconductor .
Current - Continuous Dr.17A (Ta), 71A (Tc)
Drain to Source Voltage.60 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 10 V
Input Capacitance (Ciss.1400 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)3.6W (Ta), 61W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs6.1mOhm @ 35A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageLFPAK4 (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 53?A
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