Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14A (Ta), 61A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .23 nC @ 10 V
Input Capacitance (Ciss.1450 pF @ 40 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Part StatusActive
Power Dissipation (Max)3.8W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 16A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device Package8-WDFNW (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 270?A
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