Panjit International Inc. PJD2NA90_L2_00001

mpnPJD2NA90_L2_00001
brandname: Panjit International Inc.
manufacturername: Panjit International Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	2A (Ta)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	11.1 nC @ 10 V
Input Capacitance (Ciss.	396 pF @ 25 V
Mfr	Panjit International In.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	50W (Tc)
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	6.4Ohm @ 1A, 10V
Series	-
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A