Panjit International Inc. PJMB210N65EC_R2_00601

mpnPJMB210N65EC_R2_00601
brandname: Panjit International Inc.
manufacturername: Panjit International Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	19A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	34 nC @ 10 V
Input Capacitance (Ciss.	1412 pF @ 400 V
Mfr	Panjit International In.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	150W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	210mOhm @ 9.5A, 10V
Series	-
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A