Panjit International Inc. PJP10NA60_T0_00001

mpnPJP10NA60_T0_00001
brandname: Panjit International Inc.
manufacturername: Panjit International Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10A (Ta)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	23 nC @ 10 V
Input Capacitance (Ciss.	1192 pF @ 25 V
Mfr	Panjit International In.
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	156W (Tc)
Rds On (Max) @ Id, Vgs	900mOhm @ 5A, 10V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A