prev
Panjit International Inc. PJP5NA50_T0_00001

Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C5A (Ta)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds491 pF @ 25 V
MfrPanjit International Inc.
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)87.5W (Tc)
Rds On (Max) @ Id, Vgs1.55Ohm @ 2.5A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A