| @Ic (A) | 2.0m |
| @VCE (test) (V) | 5.0 |
| C(ob) (F) | 4.5p |
| Case | SOT416 |
| Collector Capacitance (Cc) | 1.5 pF |
| Derate (Amb) (W/?C) | 1.8m |
| Forward Current Transfer Ratio (hFE), MIN, hfe | 200 |
| Ic Max. (A), Trans. Freq (Hz) Min. | 100m |
| Icbo Max. @Vcb Max. (A) | 15n |
| Manufacturer | Philips |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 225m |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.15 W |
| Maximum Collector-Base Voltage |Vcb| | 80 V |
| Maximum Collector-Emitter Voltage |Vce| | 65 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 150 |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| SKU | 562307 |
| SMD Transistor Code | 1B_1Bs_GT2 |
| Surface Mounted Yes/No | YES |
| Transition Frequency (ft): | 100 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 80 |
| Vbr CEO | 65 |