| Key ^ | Value |
|---|---|
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 68A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | PN Junction Semiconductor |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 254W |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 15V |
| Series | P3M |
| Supplier Device Package | TO-247-4L |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -8V |
| Vgs(th) (Max) @ Id | 2.4V @ 7.5mA (Typ) |