Renesas Electronics America 2SK1859-E

mpn2SK1859-E
brandname: Renesas Electronics America
manufacturername: Renesas Electronics America

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	6A (Ta)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss.	980 pF @ 10 V
Mfr	Renesas Electronics Ame.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-3P-3, SC-65-3
Part Status	Active
Power Dissipation (Max)	60W (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 3A, 10V
Series	-
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	-