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Renesas Electronics America Inc RJK03E1DNS-00#J5

Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C25A (Ta)
Drain to Source Voltage (Vdss)30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 10 V
MfrRenesas Electronics America Inc
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / Case8-PowerWDFN
Part StatusActive
Power Dissipation (Max)15W (Tc)
Rds On (Max) @ Id, Vgs6.9mOhm @ 12.5A, 10V
Series-
Supplier Device Package8-HWSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-