Attributes

Key Value
Base Product NumberRJK1002
CategoryDiscrete Semiconductor .
Current - Continuous Dr.70A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .94 nC @ 10 V
Input Capacitance (Ciss.6450 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature150?C
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)150W (Ta)
Rds On (Max) @ Id, Vgs7.6mOhm @ 35A, 10V
Series-
Supplier Device PackageTO-220ABA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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