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Renesas Electronics America Inc RJK6011DJE-00#Z0

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C100mA (Ta)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature, Series, Vgs(th) (Max) @ Id-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds25 pF @ 25 V
MfrRenesas Electronics America Inc
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
Part StatusObsolete
Power Dissipation (Max)900mW (Ta)
Rds On (Max) @ Id, Vgs52Ohm @ 50mA, 10V
Supplier Device PackageTO-92MOD
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V