| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID), Drain Current-Max (ID) | 12 A |
| Drain-source On Resistance-Max | 230 m? |
| DS Breakdown Voltage-Min | 60 V |
| ECCN Code | EAR99 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Manufacturer | Renesas Electronics Corporation |
| Manufacturer Part Number | 2SJ545-E |
| Moisture Sensitivity Level, Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |