Attributes

Key Value
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N-Channel (Dual)
Manufacturer Part NumberBSM080D12P2C008
Mounting TypeChassis Mount
Operating Temperature175
Package / CaseModule
PackagingTray
Power - Max600W
RoHS StatusRoHS-Compliant
Series-
Supplier Device PackageModule
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev