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ROHM DTB114ES
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manufacturer:
Description:
DTB114ES Transistor - CASE: Standard MAKE: ROHM

Attributes

Key ^Value
Built in Bias Resistor R1, Built in Bias Resistor R210 kOhm
CaseSC72
Forward Current Transfer Ratio (hFE), MIN56
ManufacturerRohm Semiconductor
Mat.Silicon Logic
Mat. Struct.PNP
Max. Operating Junction Temperature (Tj)150 ?C
Maximum Collector Current |Ic max|0.5 A
Maximum Collector Power Dissipation (Pc)0.3 W
Maximum Collector-Emitter Voltage |Vce|50 V
Maximum Emitter-Base Voltage |Veb|10 V
Pinout Equivalence Number3-10
PolarityPre-Biased-PNP
SKU351827
Surface Mounted Yes/NoNO
Transition Frequency (ft):140 MHz
TypeTransistor Silicon Pre-Biased-PNP
Typical Resistor Ratio R1/R21