Attributes

Key Value
Base Product NumberRQ3C150
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .60 nC @ 4.5 V
Input Capacitance (Ciss.4800 pF @ 10 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)20W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs6.7mOhm @ 15A, 4.5V
Series-
Supplier Device Package8-HSMT (3.2x3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1.2V @ 1mA
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