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Rohm Semiconductor RQ3E120ATTB
manufacturer:

Attributes

Key ^Value
Base Product NumberRQ3E120
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C12A (Ta)
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature, Series-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 15V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Part StatusActive
Power Dissipation (Max)2W (Ta)
Rds On (Max) @ Id, Vgs8mOhm @ 12A, 10V
Supplier Device Package8-HSMT (3.2x3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA