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Description:
ROHM SEMICONDUCTOR RSJ250P10FRATL | Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO26
Attributes
| Key ^ | Value |
|---|---|
| Application | automotive industry |
| Case | TO263 |
| Drain current | -25A |
| Drain-source voltage | -100V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 60nC |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | ROHM SEMICONDUCTOR |
| Mounting | SMD |
| On-state resistance | 63m? |
| Polarisation | unipolar |
| Power dissipation | 50W |
| Pulsed drain current | -50A |
| Type of transistor | P-MOSFET |