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Samsung IRF832
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Description:
IRF832 Transistor N Channel MOSFET - CASE: TO220 MAKE: Samsung

Attributes

Key Value
CaseTO220
Ciss Max. (F)600p-
Derate (Amb) (W/?C)600m
gfs Max.4.2-
gfs Min2.7
I(d) for G(fs)2.5
Id Max. (A)4.0#
ManufacturerSamsung
Max. PD (W)75#
Oper. Temp (?C) Max.150#
Pinout Equivalence Number4-109
R(ds) On (?)2.0=
SKU114814
Surface Mounted Yes/NoNO
t(f) Max. (S)23n
t(stor) Max. (S)53n
td(on) Max (S)17n
Tr Max. (s)23n
TypeTransistor N Channel MOSFET
Vbr DSS500
Vbr GSS20
Vp Max.4.0