| Key | Value |
|---|---|
| Case | TO220 |
| Ciss Max. (F) | 600p- |
| Derate (Amb) (W/?C) | 600m |
| gfs Max. | 4.2- |
| gfs Min | 2.7 |
| I(d) for G(fs) | 2.5 |
| Id Max. (A) | 4.0# |
| Manufacturer | Samsung |
| Max. PD (W) | 75# |
| Oper. Temp (?C) Max. | 150# |
| Pinout Equivalence Number | 4-109 |
| R(ds) On (?) | 2.0= |
| SKU | 114814 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 23n |
| t(stor) Max. (S) | 53n |
| td(on) Max (S) | 17n |
| Tr Max. (s) | 23n |
| Type | Transistor N Channel MOSFET |
| Vbr DSS | 500 |
| Vbr GSS | 20 |
| Vp Max. | 4.0 |