Attributes

Key Value
@Ic (test) (A)3.0
@VCE (V)1.0
CaseSOT78
Derate (Amb) (W/?C)320m
Forward Current Transfe.40
Ic Max. (A)7.0
Icbo Max. @Vcb Max. (A)10u
ManufacturerSamsung
Max. hFE200
Max. Operating Junction.150 ?C
Max. PD (W)40
Maximum Collector Curre.7 A
Maximum Collector Power.40 W
Maximum Collector-Base .80 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.7 V
Min hFE40
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityPNP
SKU217920
Surface Mounted Yes/NoNO
TypeTransistor Silicon PNP
Vbr CBO80
Vbr CEO60
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