Attributes

Key Value
@Ic (test) (A)1.0
@VCE (V)2.0
CaseSOT32
Collector Capacitance (.55 pF
Derate (Amb) (W/?C)80m
Forward Current Transfe.60
Ic Max. (A)3.0
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerSamsung
Max. hFE400
Max. Operating Junction.150 ?C
Max. PD (W)10
Maximum Collector Curre.3 A
Maximum Collector Power.10 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.5 V
Min hFE60
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityPNP
SKU217924
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.80m
Transition Frequency (f.80 MHz
TypeTransistor Silicon PNP
Vbr CBO40
Vbr CEO30
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