Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)5.0
CaseSOT78
Collector Capacitance (.150 pF
Derate (Amb) (W/?C)240m
Forward Current Transfe.60
Ic Max. (A)3.0
Icbo Max. @Vcb Max. (A)100u
ManufacturerSamsung
Max. hFE200
Max. Operating Junction.150 ?C
Max. PD (W)30
Maximum Collector Curre.3 A
Maximum Collector Power.30 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.6 V
Min hFE60
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityPNP
SKU217935
Surface Mounted Yes/NoNO
t(f) Max. (S)500n-
Trans. Freq (Hz) Min.9M
Transition Frequency (f.9 MHz
TypeTransistor Silicon PNP
Vbr CBO60
Vbr CEO60
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