Attributes

Key Value
@Ic (A)50m
@VCE (test) (V)1.0
CaseTO92
Forward Current Transfe.70
hfe70
Ic Max. (A)300m
Icbo Max. @Vcb Max. (A)100n
ManufacturerSamsung
Max. Operating Junction.150 ?C
Max. PD (W)400m
Maximum Collector Curre.0.3 A
Maximum Collector Power.0.4 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.25 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-12
PolarityNPN
SKU569318
Surface Mounted Yes/NoNO
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO25
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