Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)5.0
CaseSOT78
Derate Above 25?C200m
Forward Current Transfe.40
Ic Max. (A)3.0
Icbo Max. @Vcb Max. (A)50u
ManufacturerSamsung
Max. hFE240
Max. Operating Junction.150 ?C
Max. PD (W)25
Maximum Collector Curre.3 A
Maximum Collector Power.25 W
Maximum Collector-Base .80 V
Maximum Collector-Emitt.55 V
Maximum Emitter-Base Vo.5 V
Min hFE40
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityNPN
SKU569319
Surface Mounted Yes/NoNO
TypeTransistor Silicon NPN
Vbr CBO80
Vbr CEO55
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