mpn
KSD363
brand
name: Samsung
manufacturer
name: Samsung
Attributes
Key
Value
@Ic (test) (A)
1.0
@VCE (V)
5.0
Case
SOT78
Derate Above 25?C
320m
Forward Current Transfe.
40
Ic Max. (A)
6.0
Icbo Max. @Vcb Max. (A)
1.0m
Manufacturer
Samsung
Max. hFE
240
Max. Operating Junction.
150 ?C
Max. PD (W)
40
Maximum Collector Curre.
6 A
Maximum Collector Power.
40 W
Maximum Collector-Base .
300 V
Maximum Collector-Emitt.
120 V
Maximum Emitter-Base Vo.
8 V
Min hFE
40
Oper. Temp (?C) Max.
150
Pinout Equivalence Numb.
3-15
Polarity
NPN
SKU
569320
Surface Mounted Yes/No
NO
Trans. Freq (Hz) Min.
10M
Transition Frequency (f.
10 MHz
Type
Transistor Silicon NPN
Vbr CBO
300
Vbr CEO
120