Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)5.0
CaseSOT78
Collector Capacitance (.90 pF
Derate Above 25?C240m
Forward Current Transfe.40
Ic Max. (A)4.0
Icbo Max. @Vcb Max. (A)30u
ManufacturerSamsung
Max. hFE240
Max. Operating Junction.150 ?C
Max. PD (W)30
Maximum Collector Curre.4 A
Maximum Collector Power.30 W
Maximum Collector-Base .80 V
Maximum Collector-Emitt.80 V
Maximum Emitter-Base Vo.5 V
Min hFE40
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityNPN
SKU217987
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.3M
Transition Frequency (f.3 MHz
TypeTransistor Silicon NPN
Vbr CBO80
Vbr CEO80
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