Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.2A (Ta)
Drain to Source Voltage.60 V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .6.4 nC @ 10 V
Input Capacitance (Ciss.265 pF @ 20 V
MfrSanyo
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseSC-96
Power Dissipation (Max)1W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs530mOhm @ 600mA, 10V
Series-
Supplier Device Package3-CPH
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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