Brand | Semikron |
Channel Type | Channel Type, N |
Collector Current, Continuous Collector Current, Maximum Continuous Collector Current | 130 A |
Collector to Emitter Shorted Voltage, Collector to Emitter Voltage, Maximum Collector Emitter Voltage, Voltage, Breakdown, Collector to Emitter, Voltage, Saturation, Collector to Emitter | 600 V |
Configuration | Dual |
Dimensions | 94 x 34 x 30.5mm |
Energy Rating | 7 mJ |
Fall Time | 35 nS (Typ.) |
Gate Capacitance | 5.6 nF |
Height | 1.201" (30.5mm), 30.5mm |
Length | 94mm |
Maximum Gate Emitter Voltage | Maximum Gate Emitter Voltage |
Maximum Operating Temperature | +150 ?C |
Minimum Operating Temperature | -40 ?C |
Mounting Type | Screw Mount, Surface Mount |
Number of Transistors | 2 |
Operating and Storage Temperature | -40 to 150 ?C |
Package Type | Semitrans2 |
Pin Count | 7 |
Polarity | N-Channel |
Primary Type | Si |
Product Header | Superfast N-Channel IGBT Module |
Resistance, Thermal, Junction to Case | 0.27 K/W |
Rise Time | 40 nS (Typ.) |
Series | IGBT Series |
Stock | Stock |
Temperature Operating Range | -40 to +150 ?C |
Transistor Configuration | Half Bridge |
Transistor Type | IGBT |
Type | Standard |
Width | 0 in, 34mm |