| Channel Type | N |
| Collector Current, Continuous Collector Current | 130 A |
| Collector to Emitter Shorted Voltage, Collector to Emitter Voltage, Voltage, Breakdown, Collector to Emitter, Voltage, Saturation, Collector to Emitter | 600 V |
| Configuration | Dual |
| Energy Rating | 7 mJ |
| Fall Time | 35 nS (Typ.) |
| Gate Capacitance | 5.6 nF |
| Height | 1.201" (30.5mm) |
| Maximum Operating Temperature | +150 ?C |
| Mounting Type | Surface Mount |
| Operating and Storage Temperature | -40 to 150 ?C |
| Package Type | Semitrans2 |
| Polarity | N-Channel |
| Primary Type | Si |
| Product Header | Superfast N-Channel IGBT Module |
| Resistance, Thermal, Junction to Case | 0.27 K/W |
| Rise Time | 40 nS (Typ.) |
| Series | IGBT Series |
| Temperature Operating Range | -40 to +150 ?C |
| Transistor Type | IGBT |
| Type | Standard |
| Width | 0 in |