Alternate Part No. | 844-IRF820 |
Brand | Vishay / Siliconix |
Case | TO220 |
Channel Mode | Enhancement |
Ciss Max. (F) | 360p- |
Configuration | Single |
Derate (Amb) (W/?C) | 400m |
device function | mosfet |
device package type | to-220 |
Fall Time | 16 ns |
gfs Max. | 2.3- |
gfs Min | 1.5 |
I(d) for G(fs) | 1.4 |
Id - Continuous Drain Current | 2.5 A |
Id Max. (A) | 2.5# |
item per pack | 1 |
Manufacturer | Vishay Semiconductor, Vishay |
Manufacturer Part No. | IRF820 |
Max. PD (W) | 50 |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Oper. Temp (?C) Max. | 150# |
package | 50 PER TUBE |
Package/Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 50 W |
Pinout Equivalence Number | 4-109 |
Product Category | mosfet |
R(ds) On (?) | 3.0= |
Rds On - Drain-Source Resistance | 3 Ohms |
Rise Time | 8.6 ns |
Series | IRF/SIHF820 |
SKU | 85286 |
Surface Mounted Yes/No | NO |
t(f) Max. (S) | 18n |
t(stor) Max. (S) | 42n |
td(on) Max (S) | 15n |
Tr Max. (s) | 18n |
Transistor Polarity | N-Channel |
Type | Transistor N Channel MOSFET |
Typical Turn-Off Delay Time | 33 ns |
Vbr DSS | 500 |
Vbr GSS | 20 |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Vp Max. | 4.0 |