SILICONIX (VISHAY) IRF9Z34SPBF

B0731Q7NLW

SILICONIX (VISHAY) IRF9Z34SPBF Single P-Channel 60 V 0.14 Ohms Surface Mount Power Mosfet - D2PAK-3 - 25 item(s)

SILICONIX (VISHAY) IRF9Z34SPBF Single P-Channel 60 V 0.14 Ohms Surface Mount Power Mosfet - D2PAK-3 - 25 item(s)zoom

Attributes

Key Value
Alternate Part No.844-IRF9Z34SPBF
Base Product NumberIRF9Z34
BrandVishay / Siliconix
CaseD2PAK,
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
Circuit TypeP-Channel
ConfigurationSingle
Current - Continuous Dr.18A (Tc)
Drain current-13A
Drain Current Id(rms)18 A
Drain Source Voltage Vds60 VDC
Drain to Source Voltage.60 V, 60V
Drain-source voltage-60V
Drive Voltage (Max Rds .10V
Drive Voltage (Max Rds .10V
Fall Time58 ns
Fall Time tf58 ns
Family SeriesVishay Transistors, D2P.
FET Feature-
FET TypeP-Channel
Gate charge34nC
Gate Charge (Qg) (Max) .34 nC @ 10 V, 34nC @ 10V
Gate Leakage Current0.1 ?A
Gate Source Voltage Vgss20 VDC
Gate-source voltage?20V
Gross Weight0 lbs
Id - Continuous Drain C.18 A
Input Capacitance (Ciss.1100 pF @ 25 V, 1100pF .
Item NumberIRF9Z34SPBF
Kind of channelenhanced
Kind of packagetube
ManufacturerVISHAY
Manufacturer Part No.IRF9Z34SPBF
Manufacturer Part NumberIRF9Z34SPBF
Manufacturer Standard L.8 Weeks
Maximum Operating Tempe.+ 175 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
MountingSMD
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Net Weight0 lbs
On-state resistance0.14?
Operating Temperature-55, -55?C ~ 175?C (TJ)
PackageTO-263, tube
Package / CaseTO-263-3, D?Pak (2 Lead.
Package/CaseD2PAK-2
Packagingtube
Pd - Power Dissipation3.7 W
Polarisationunipolar
Power dissipation88W
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Product CategoryMOSFET
Product SeriesD2PAK
Product StatusActive
Rds On (Max) @ Id, Vgs140mOhm @ 11A, 10V
Rds On - Drain-Source R.140 mOhms
rDS(on)140 mOhm
Rise Time120 ns
Rise Time tr120 ns
RoHSYes
SeriesIRF Series, -
Supplier Device PackageD?PAK (TO-263), D2PAK
TechnologyMOSFET (Metal Oxide)
Transistor PolarityP-Channel
Trr100 ns
Turn Off Delay Time20 ns
Turn On Delay Time18 ns
Typ. Vgs(th)3 VDC
Type of transistorP-MOSFET
Typical Turn-Off Delay .20 ns
Vds - Drain-Source Brea.- 60 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id4V @ 250?A, 4V @ 250

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIRF9Z34SPBF0.6311118VISHAY0.63 @ 10
thumbzoomiodPartsIRF9Z34SPBF1.011250700Vishay1.011 @ 250
Future Electronics17247981.321161Vishay1.32 @ 10
thumbzoomGalcoIRF9Z34SPBF-VISH1.36100010Vishay1.36 @ 1000
HotendaH18139871.41311310Vishay/Siliconix1.413 @ 10
us.rs-online.com704594322.01100010Siliconix / Vishay2.01 @ 1000
Digi-Key33053492.2584110Vishay Siliconix2.2584 @ 10
thumbzoomswatee.comIRF9Z34SPBF3.91725Vishay3.9 @ 10
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