SILICONIX (VISHAY) SIA906EDJ-T1-GE3

B076FCMYSJ

SILICONIX (VISHAY) SIA906EDJ-T1-GE3 Dual N Channel 20 V 0.046 ? 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual - 3000 item(s)

SILICONIX (VISHAY) SIA906EDJ-T1-GE3 Dual N Channel 20 V 0.046 ? 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberSIA906
CategoryDiscrete Semiconductor .
Configuration2 N-Channel (Dual)
Current - Continuous Dr.4.5A
DescriptionMOSFET 2N-CH 20V 4.5A S.
Detailed DescriptionMosfet Array 20V 4.5A 7.
Digi-Key Part NumberSIA906EDJ-T1-GE3TR-ND -.
Drain to Source Voltage.20V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) .12nC @ 10V
Input Capacitance (Ciss.350pF @ 10V
ManufacturerVishay Siliconix, VISHAY
Manufacturer Product Nu.SIA906EDJ-T1-GE3
Manufacturer Standard L.63 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SC-70-6 Dual
Power - Max7.8W
Product StatusActive
Rds On (Max) @ Id, Vgs46mOhm @ 3.9A, 4.5V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SC-70-6 Dual
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs(th) (Max) @ Id1.4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18000360.2092516000Vishay/Siliconix0.20925 @ 3000
Newark81AC99060.238300012000VISHAY0.238 @ 3000
thumbzoomDigi-Key26227620.2636521114858Vishay Siliconix0.263652 @ 3000
RS Delivers165-71860.280813000Vishay0.2808 @ 3000
Future Electronics91179860.32413000Vishay0.324 @ 3000
TMESIA906EDJ-T1-GE30.33230003000VISHAY0.332 @ 3000
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