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STMicroelectronics RECT121039
mpn:
manufacturer:
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Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C4.5A (Tc)
Drain to Source Voltage (Vdss)500V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 25V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusObsolete
Power Dissipation (Max)74W (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.7A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A

(SY #59) 6pcs IRF830 ST Microelectronics MOSFET N-Channel 500V 4.5A TO-220

(SY #59) 6pcs IRF830 ST Microelectronics MOSFET N-Channel 500V 4.5A TO-220zoom