STMicroelectronics STB20NM50-1

mpnSTB20NM50-1
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Current - Continuous Dr.	20A (Tc)
Drain to Source Voltage.	550 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	56 nC @ 10 V
Input Capacitance (Ciss.	1480 pF @ 25 V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-65?C ~ 150?C (TJ)
Package / Case	TO-262-3 Long Leads, I?.
Part Status	-
Power Dissipation (Max)	192W (Tc)
Rds On (Max) @ Id, Vgs	250mOhm @ 10A, 10V
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5V @ 250?A