Alternate Part No. | 511-STB21NM60ND |
Base Product Number | STB21N |
Brand, Manufacturer, Mfr | STMicroelectronics |
Category | Discrete Semiconductor Products |
Channel Mode | Enhancement |
Configuration | Single |
Current - Continuous Drain (Id) @ 25?C | 17A (Tc) |
Drain to Source Voltage (Vdss), Vds - Drain-Source Breakdown Voltage | 600 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Fall Time | 48 ns |
FET Feature | - |
FET Type, Transistor Polarity | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Id - Continuous Drain Current | 17 A |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
Manufacturer Part No., Series | STB21NM60ND |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Mounting Type | Surface Mount |
Operating Temperature | 150?C (TJ) |
Package | Tape & Reel (TR) |
Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
Package/Case | D2PAK-2 |
Packaging | Reel |
Part Status, Product Status | Obsolete |
Pd - Power Dissipation | 140 W |
Power Dissipation (Max) | 140W (Tc) |
Product Category | MOSFET |
Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
Rds On - Drain-Source Resistance | 220 mOhms |
Rise Time | 16 ns |
Series | FDmesh? II |
Supplier Device Package | D2PAK |
Technology | MOSFET (Metal Oxide) |
Typical Turn-Off Delay Time | 70 ns |
Vgs (Max) | ?25V |
Vgs - Gate-Source Breakdown Voltage | 25 V |
Vgs(th) (Max) @ Id | 5V @ 250?A |