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STMicroelectronics STB21NM60ND
manufacturer:

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C17A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Part StatusObsolete
Power Dissipation (Max)140W (Tc)
Rds On (Max) @ Id, Vgs220mOhm @ 8.5A, 10V
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A