Attributes

Key Value
Base Product NumberSTB23N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 10 V
Input Capacitance (Ciss.2050 pF @ 50 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)150W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
SeriesMDmesh? II
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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