Attributes

Key Value
Base Product NumberSTD26
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .12 nC @ 4.5 V
Input Capacitance (Ciss.1450 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)40W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 10V
SeriesDeepGATE?, STripFET? VI
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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