Attributes

Key Value
Base Product NumberSTD4N90
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Tc)
Drain to Source Voltage.900 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5.3 nC @ 10 V
Input Capacitance (Ciss.173 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs2.1Ohm @ 1A, 10V
SeriesMDmesh?
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 100?A
prev