Attributes

Key Value
Base Product NumberSTF12
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .59 nC @ 10 V
Input Capacitance (Ciss.1740 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)35W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs640mOhm @ 5A, 10V
SeriesSuperMESH?
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 100?A
prev